Performance Analysis of Double Gate Dielectric Modulation in Schottky FET as Biomolecule Sensor

In this article, a charge-plasma (CP)-based double gate schottky barrier FET structure has been investigated using dielectric controlled biomolecule sensor. The use of Hafnium as charge plasma at the source side encourages an n + in un-doped silicon region, which expressively decreases Schottky thickness. oxide below Metal M1 and M2 is etched out to create nanogap openings for finding. Here, existence molecules categorized by modification material inside related densities, hence, controls tunneling thickness Metal-source-silicon channel interface, also with help charges intrinsic-Si film. This paper mainly focused on fundamental physics proposed approximations their relative sensitivity detecting enactment. sensing enactment assessed charged biomolecules charge-neutral widespread device simulation, special properties biomolecule. improves its control over region used sensing, ensuing larger on-state drain current (Ids) Hence, voltage recognised active design parameters efficient reduction. Moreover, SB FET-based biosensor threshold (Vth), abnormality on-current (Ion), Ion/Ioff ratio shown. Also, simulations calibrated experimental results. change Ion maintain improved ability recognition.